- 您现在的位置：买卖IC网 > Sheet目录486 > NTB5605T4G (ON Semiconductor)MOSFET P-CH 60V 18.5A D2PAK
NTB5605P, NTBV5605
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (Br)DSS
V (Br)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 60
? 64
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
T J = 25 ° C
? 1.0
m A
V DS = ? 60 V
T J = 125 ° C
? 10
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(th)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 5.0 V, I D = ? 8.5 A
V GS = ? 5.0 V, I D = ? 17 A
? 1.0
? 1.5
120
140
? 2.0
140
V
m W
Forward Transconductance
Drain ? to ? Source On Voltage
g FS
V DS(on)
V DS = ? 10 V, I D = ? 8.5 A
V GS = ? 5.0 V, I D = ? 8.5 A
12
? 1.3
S
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
730
1190
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C oss
C rss
Q G(TOT)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = ? 25 V
V GS = ? 5.0 V, V DS = ? 48 V,
I D = ? 17 A
211
67
13
4.0
7.0
300
120
22
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
12.5
25
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 5.0 V, V DD = ? 30 V,
I D = ? 17 A, R G = 9.1 W
122
29
75
183
58
150
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
T J = 25 ° C
? 1.55
? 2.5
V
I S = ? 17 A
T J = 125 ° C
? 1.4
Reverse Recovery Time
t rr
60
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = ? 17 A
39
21
0.14
ns
nC
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTB6410ANG
MOSFET N-CH 100V 76A D2PAK
NTB6411ANG
MOSFET N-CH 100V 72A D2PAK
NTB6413ANG
MOSFET N-CH 100V 42A D2PAK
NTB85N03T4G
MOSFET N-CH 28V 85A D2PAK
NTBV5605T4G
MOSFET P-CH 60V 18.5A D2PAK
NTC-04-0002
GU 7000 SERIES POWER CABLE
NTCDS3SG104GC4NB
THERMISTOR NTC GLASS 100KOHM AXL
NTCG104LH104HT1
THERMISTOR NTC 100K OHM 3% 0402
相关代理商/技术参数
NTB5860N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET
NTB5860NL
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET
NTB5860NLT4G
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET
NTB5860NT4G
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET
NTB60N06
功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB60N06G
功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB60N06L
功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB60N06LG
功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube